| 論 文 リ ス ト |
| 2018/2/11 N. TOKUDA |
| 国 際 学 術 誌 （査 読 有） ( 8 3 ) | |
| 2 0 1 7 ( 5 ) | |
| 83 | “Mechanism of anisotropic etching on diamond (111) surfaces by a hydrogen plasma treatment”,Hiroki Kuroshima, Toshiharu Makino, Satoshi Yamasaki, Tsubasa Matsumoto, Takao Inokuma, Norio Tokuda, Appl. Surf. Sci. Vol. 422 (2017) 452-455 doi:10.1016/j.apsusc.2017.06.005 |
| 82 | “B-doped diamond field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene gate insulator”, Ryota Karaya, Ikki Baba, Yosuke Mori, Tsubasa Matsumoto, Takashi Nakajima, Norio Tokuda, Takeshi Kawae, Jpn. J. Appl. Phys. Vol. 56 (2017) 10PF06 doi:10.7567/JJAP.56.10PF06 |
| 81 | “Self-separation of freestanding diamond films using graphite interlayers precipitated from C-dissolved Ni substrates”, Shinya Ito, Masatsugu Nagai, Tsubasa Matsumoto, Takao Inokuma, Norio Tokuda, J. Cryst. Growth Vol. 470 (2017) 104-107 doi:10.1016/j.jcrysgro.2017.04.014 |
| 80 | “Diamond Schottky-pn diode using lightly nitrogen-doped layer”, Ryota Karaya, Hiroki Furuichi, Tsubasa Matsumoto, Takashi Mukose, Toshiharu Makino, Daisuke Takeuchi, Satoshi Yamasaki, Takao Inokuma, Norio Tokuda, Diamond Relat. Mater. Vol. 75 (2017) 152-154 doi:10.1016/j.diamond.2017.03.018 |
| 79 | “Fabrication of graphene on atomically flat diamond (111) surfaces using nickel as a catalyst”, Shohei Kanada, Masatsugu Nagai, Shinya Ito, Tsubasa Matsumoto, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Takao Inokuma, Norio Tokuda, Diamond Relat. Mater. Vol. 75 (2017) 105-109 doi:10.1016/j.diamond.2017.02.014 |
| 2 0 1 6 ( 5 ) | |
| 78 | “Atomically flat diamond (100) surface formation by anisotropic etching of solid-solution reaction of carbon into nickel”, Kazuhiro Nakanishi, Hiroki Kuroshima, Tsubasa Matsumoto, Takao Inokuma, Norio Tokuda, Diamond Relat. Mater. Vol. 68 (2016) 127-130 doi:10.1016/j.diamond.2016.06.011 |
| 77 | “Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics”, Tsubasa Matsumoto, Hiromitsu Kato, Kazuhiro Oyama, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Takao Inokuma, Norio Tokuda, Satoshi Yamasaki, Sci. Rep. 6 (2016) 31585 Full Text PDF: FREE |
| 76 | “Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films”, Norio Tokuda, Masahiko Ogura, Tsubasa Matsumoto, Satoshi Yamasaki, Takao Inokuma, Phys. Stat. Sol. (a) Vol. 213 (2016) 2051-2055 doi:10.1002/pssa.201600082 |
| 75 | “H-terminated diamond field effect transistor with ferroelectric gate insulator”, Ryota Karaya, Hiroki Furuichi, Takashi Nakajima, Norio Tokuda, Takeshi Kawae, Appl. Phys. Lett. Vol. 108 (2016) 242101 doi:10.1063/1.4953777 |
| 74 | “Time-resolved cyclotron resonance on dislocation-free HPHT diamond”, I. Akimoto, N. Naka, N. Tokuda, Diamond Relat. Mater. Vol. 63 (2016) 38-42 doi:10.1016/j.diamond.2015.08.013 |
| 2 0 1 4 ( 6 ) | |
| 73 | “Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond”, T. Miyazaki, Y. Miyamoto, T. Makino, H. Kato, S. Yamasaki, T. Fukui, Y. Doi, N. Tokuda, M. Hatano, N. Mizuodhi, Appl. Phys. Lett. 105 (2014) 261601 |
| 72 | “Free exciton luminescence from a diamond p-i-n diode grown on a substrate produced by heteroepitaxy”, D. Takeuchi, T. Makino, H. Kato, M. Ogura, N. Tokuda, T. Matsumoto, D. Kuwabara, H. Okushi, Satoshi Yamasaki, Phys. Stat. Sol. (a) 211 (2014) 2251-2256 |
| 71 | “Perfect selective alignment of nitrogen-vacancy centers in diamond”, Takahiro Fukui, Yuki Doi, Takehide Miyazaki, Yoshiyuki Miyamoto, Hiromitsu Kato, Tsubasa Matsumoto, Toshiharu Makino, Satoshi Yamasaki, Ryusuke Morimoto, Norio Tokuda, Mutsuko Hatano, Yuki Sakagawa, Hiroki Morishita, Toshiyuki Tashima, Shinji Miwa, Yoshishige Suzuki and Norikazu Mizuochi, Appl. Phys. Express Vol. 7 (2014) 055201 Full Text PDF: FREE |
| 70 | “Density functional studies of surface potentials for hydrogen and oxygen atoms on diamond (111) surfaces”, Samar Moustafa, Norio Tokuda, and Takao Inokuma, Jpn. J. Appl. Phys. Vol. 53 (2014) 02BD01 doi:10.7567/JJAP.53.02BD01 |
| 69 | “Reduction of n-type diamond contact resistance by graphite electrode”, Tsubasa Matsumoto, Hiromitsu Kato, Norio Tokuda, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Hideyo Okushi, and Satoshi Yamasaki, Phys. Stat. Sol. RRL Vol. 8 (2014) 137-140 |
| 68 | “Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition”, Norio Tokuda, Masahiko Ogura, Satoshi Yamsaki, and Takao Inokuma, Jpn. J. Appl. Phys. Vol. 53 (2014) 04EH04 doi:10.7567/JJAP.53.04EH04 |
| 2 0 1 3 ( 1 ) | |
| 67 | “Formation of Graphene-on-Diamond Structure by Graphitization of Atomically Flat Diamond (111) Surface”, Norio Tokuda, Makoto Fukui, Toshiharu Makino, Daisuke Takeuchi, Satoshi Yamsaki, and Takao Inokuma, Jpn. J. Appl. Phys. Selected Topics in Applied Physics Vol. 52 (2013) 110121 Full Text PDF: FREE |
| 2 0 1 2 ( 4 ) | |
| 66 | “Fabrication of (Bi,Pr)(Fe,Mn)O 3 thin films on polycrystalline diamond substrates by chemical solution deposition and their properties”, Takeshi Kawae, Hiroki Kawasaki, Takashi Nakajima, Norio Tokuda, Soichiro Okamura, Akiharu Morimoto, and Yoshihiko Takano, Jpn. J. Appl. Phys. Vol. 51 (2012) 09LA08 |
| 65 | “Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth”, Norio Tokuda, Toshiharu Makino, Takao Inokuma, and Satoshi Yamasaki, Jpn. J. Appl. Phys. Selected Topics in Applied Physics Vol. 51 (2012) 090107 Full Text PDF: FREE |
| 64 | “Isotope Effect of Deuterium Microwave Plasmas on the Formation of Atomically Flat (111) Diamond Surfaces”, Norikazu Mizuochi, Norio Tokuda, Masahiko Ogura, and Satoshi Yamasaki, Jpn. J. Appl. Phys. Selected Topics in Applied Physics Vol. 51 (2012) 090106 Full Text PDF: FREE |
| 63 | “Fractional Surface Termination of Diamond by Electrochemical Oxidation”, René Hoffmann, Harald Obloh, Norio Tokuda, Nianjun Yang, Christoph E. Nebel, Langmuir 28 (2012) 47-50 |
2 0 1 1 ( 6 ) | |
| 62 | “The creation of a biomimetic interface between boron-doped diamond and immobilized proteins”, René Hoffmann, Armin Kriele, Harald Obloh, Norio Tokuda, Waldemar Smirnov, Nianjun Yang, Christoph E. Nebel, Biomaterials 32 (2011) 7325-7332 |
| 61 | “Electron emission from CVD diamond p–i–n junctions with negative electron affinity during room temperature operation”, D. Takeuchi, T. Makino, H. Kato, M. Ogura, N. Tokuda, K. Oyama, T. Matsumoto, H. Okushi, and S. Yamasaki, Diamond Relat. Mater. 20 (2011) 917-921 |
| 60 | “Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure”, Takeshi Kawae, Yuji Hori, Takashi Nakajima, Hiroki Kawasaki, Norio Tokuda, Soichiro Okamura, Yoshiko Takano, and Akiharu Morimoto, Electrochem. Solid-State Lett. 14 (2011) G31-G34 |
| 59 | “Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers”, Kazuihiro Oyama, Sung-Gi Ri, Hiromitsu Kato, Daisuke Takeuchi, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki, Phys. Stat. Sol. (a) 208 (2011) 937-942 |
| 58 | “Effects of high-temperature annealing on electron spin resonance in SiOx films prepared by R. F. sputtering system”, A.M.A. Shamekh, N. Tokuda, T. Inokuma, J. Non-Cryst. Solids 357 (2011) 981-985 |
| 57 | “Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering”, A.M.A. Shamekh, N. Tokuda, T. Inokuma, Jpn. J. Appl. Phys. 50 (2011) 01BF04 |
2 0 1 0 ( 4 ) | |
| 56 | “Diamond Schottky-pn diode without trade-off relationship between on-resistance and blocking voltage”, Toshiharu Makino, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Satoshi Tanimoto, Hideyo Okushi, and Satoshi Yamasaki, Phys. Stat. Sol. (a) 207 (2010) 2105-2109 |
| 55 | “Improvement of (001)-oriented diamond p-i-n diode by use of selective grown n+ layer”, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Kazuhiro Oyama, Daisuke Takeuchi, Hideyo Okushi, and Satoshi Yamasaki, Phys. Stat. Sol. (a) 207 (2010) 2099-2104 |
| 54 | “Electron Emission from a Diamond (111) p–i–n+ Junction Diode with Negative Electron Affinity during Room Temperature Operation”, Daisuke Takeuchi, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Norio Tokuda, Kazuhiro Oyama, Tsubasa Matsumoto, Izumi Hirabayashi, Hideyo Okushi, and Satoshi Yamasaki, Appl. Phys. Express 3 (2010) 041301 |
| 53 | “Growth of atomically step-free surface on diamond {111} mesas”, Norio Tokuda, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki, Diamond Relat. Mater. 19 (2010) 288 |
2 0 0 9 ( 1 2 ) | |
| 52 | “Doping-induced changes in the valence band edge structure of homoepitaxial B-doped diamond films below Mott's critical density”, Daisuke Takeuchi, Masahiko Ogura, Norio Tokuda, Hideyo Okushi, Satoshi Yamasaki, Phys. Stat. Sol. (a) 206 (2009) 1991 |
| 51 | “Diamond Schottky-pn diode with high forward current density”, Toshiharu Makino, Satoshi Tanimoto, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Hiromichi Ohashi, Hideyo Okushi, and Satoshi Yamasaki, Phys. Stat. Sol. (a) 206 (2009) 2086 |
| 50 | “Vertically aligned diamond nanowires: Fabrication, characterization, and application for DNA sensing”, Nianjung Yang, Hiroshi Uetsuka, Oliver A. Williams, Eiji Osawa, Norio Tokuda, and Christoph E. Nebel, Phys. Stat. Sol. (a) 206 (2009) 2048 |
| 49 | “Diamond Schottky-pn diode with high forward current density and fast switching operation”, Toshiharu Makino, Satoshi Tanimoto, Yusuke Hayashi, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Hiromichi Ohashi, Hideyo Okushi, and Satoshi Yamasaki, Appl. Phys. Lett. 94 (2009) 262101 |
| 48 | “Diamond nanowires, a new approach towards next generation electrochemical gene sensor platforms”, C. E. Nebel, N. Yang, H. Uetsuka, E. Osawa, N. Tokuda, O. Williams, Diamond Relat. Mater. 18 (2009) 910 |
| 47 | “Characterization of specific contact resistance on heavily phosphorus-doped diamond films”, Hiromitsu Kato, Daisuke Takeuchi, Norio Tokuda, Hitoshi Umezawa, Hideyo Okushi, Satoshi Yamasaki, Diamond Relat. Mater. 18 (2009) 782 |
| 46 | “Electrical and light-emitting properties from (111)-oriented homoepitaxial diamond p-i-n junctions”, Toshiharu Makino, Sung-Gi Ri, Norio Tokuda, Hiromitsu Kato, Satoshi Yamasaki, Hideyo Okushi, Diamond Relat. Mater. 18 (2009) 764 |
| 45 | “Selective Growth of Buried n+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film”, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki, Appl. Phys. Express 2 (2009) 055502 |
| 44 | “Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface”, Norio Tokuda, Hitoshi Umezawa, Hiromitsu Kato, Masahiko Ogura, Satoshi Gonda, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki, Appl. Phys. Express 2 (2009) 055001 |
| 43 | “High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers”, Kazuihiro Oyama, Sung-Gi Ri, Hiromitsu Kato, Masahiko Ogura, Toshiharu Makino, Daisuke Takeuchi, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki, Appl. Phys. Lett. 94 (2009) 152109 |
| 42 | “Recovery of negative electron affinity by annealing on (111) oxidized diamond surfaces”, Daisuke Takeuchi, Sung-Gi Ri, Norio Tokuda, Satoshi Yamasaki, Diamond Relat. Mater. 18 (2009) 206 |
| 41 | “Flattening of oxidized diamond (111) surfaces with H2SO4/H2O2 solutions”, Norio Tokuda, Daisuke Takeuchi, Sung-Gi Ri, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki, Diamond Relat. Mater. 18 (2009) 213 |
2 0 0 8 ( 9 ) | |
| 40 | “Low specific contact resistance of heavily phosphorus-doped diamond film”, Hiromitsu Kato, Hitoshi Umezawa, Norio Tokuda, Daisuke Takeuchi, Hideyo Okushi, and Satoshi Yamasaki, Appl. Phys. Lett. 93 (2008) 202103 |
| 39 | “Electrical activity of doped phosphorus atoms in (001) n-type diamond”, Hiromitsu Kato, Daisuke Takeuchi, Norio Tokuda, Hitoshi Umezawa, Satoshi Yamasaki, and Hideyo Okushi, Phys. Stat. Sol. (a) 205 (2008) 2195 |
| 38 | “Electrical and light-emitting properties of homoepitaxial diamond p-i-n junction”, Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Shokichi Kanno, Satoshi Yamasaki, and Hideyo Okushi, Phys. Stat. Sol. (a) 205 (2008) 2200 |
| 37 | “Atomically flat diamond (111) surface formation by homoepitaxial lateral growth”, Norio Tokuda, Hitoshi Umezawa, Sung-Gi Ri, Masahiko Ogura, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki, Diamond Relat. Mater. 17 (2008) 1051 |
| 36 | “Roughening of atomically flat diamond (111) surface by a hot HNO3/H2SO4 solution”, Norio Tokuda, Hitoshi Umezawa, Sung-Gi Ri, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki, Diamond Relat. Mater. Vol. 17 (2008) 486 |
| 35 | “Mapping of extended defects in B-doped (001) homoepitaxial diamond films by electron-beam-induced current (EBIC) and cathodoluminescence (CL) combination technique”, Sung-Gi Ri, Xiao Li Yuan, Takashi Sekiguchi, Norio Tokuda, Masahiko Ogura, Hideyo Okushi and Satoshi Yamasaki, Diamond Relat. Mater. 17 (2008) 489 |
| 34 | “Photoelectron emission from heavily B-doped homoepitaxial diamond films”, Daisuke Takeuchi, Norio Tokuda, Masahiko Ogura, and Satoshi Yamasaki, Diamond Relat. Mater. 17 (2008) 813 |
| 33 | “Fermi level pinning-free interface at metals/homoepitaxial diamond (111) films after oxidation treatments”, Sung-Gi Ri, Daisuke Takeuchi, Norio Tokuda, Hideyo Okushi, Satoshi Yamasaki, Appl. Phys. Lett. 92 (2008) 112112 |
| 32 | “Exciton-derived Electron Emission from (001) Diamond p–n Junction Diodes with Negative Electron Affinity”, Daisuke Takeuchi, Toshiharu Makino, Sung-Gi Ri, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyo Okushi, and Satoshi Yamasaki, Appl. Phys. Express 1 (2008) 015004 |
2 0 0 7 ( 1 1 ) | |
| 31 | “Inhomogeneous DNA bonding to polycrystalline CVD diamond”, C. E. Nebel, H. Uetsuka, B. Rezek, D. Shin, N. Tokuda, and T. Nakamura, Diamond Relat. Mater. 16 (2007) 1648 |
| 30 | “Direct observation of two-dimensional growth at SiO2/Si(111) interface”, Daisuke Hojo, Norio Tokuda, Kikuo Yamabe, Thin Solid Films 515 (2007) 7892 |
| 29 | “Diamond and biology”, Christoph E. Nebel, Dongchan Shin, Bohuslav Rezek, Norio Tokuda, Hiroshi Uetsuka and Hideyuki Watanabe, Journal of the Royal Society Interface 4 (2007) 439 |
| 28 | “Hillock-Free Heavily Boron-doped Homoepitaxial Diamond Films on Misoriented (001) Substrates”, Norio Tokuda, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki, Jpn. J. Appl. Phys. Vol. 46 (2007) 1469 |
| 27 | “Surface roughening of diamond(001) films during homoepitaxial growth in heavy boron doping”, Norio Tokuda, Hitoshi Umezawa, Takeyasu Saito, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki, Diamond Relat. Mater. 16 (2007) 767 |
| 26 | “Cycle of two-step etching process using ICP for diamond MEMS applications”, Takatoshi Yamada, Hiromichi Yoshikawa, Hiroshi Uetsuka, Somu Kumaragurubaran, Norio Tokuda, Shin-ichi Shikata, Diamond and Relat. Mater. 16 (2007) 996 |
| 25 | “Surface electronic properties on boron doped (111) CVD homoepitaxial diamond films after oxidation treatments”, Sung-Gi Ri, Daisuke Takeuchi, Christoph E. Nebel, Norio Tokuda, Yuichi Yamazaki, Satoshi Yamasaki and Hideyo Okushi, Diamond and Relat. Mater. 16 (2007) 831 |
| 24 | “Electrical and light-emitting properties of (001)-oriented homoepitaxial diamond p-i-n junction”, Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Satoshi Yamasaki and Hideyo Okushi, Diamond and Relat. Mater. 16 (2007) 1025 |
| 23 | “Electrochemical grafting of boron-doped single-crystalline CVD-Diamond with nitrophenyl molecules”, Hiroshi Uetsuka, Dongchan Shin, Norio Tokuda, Kazuhiko Saeki, and Nebel Erwin Christoph, Langmuir, 23 (2007) 3466 |
| 22 | “Leakage current analysis of diamond Schottky barrier diode”, Hitoshi Umezawa, Takeyasu Saito, Norio Tokuda, Masahiko Ogura, Sung-Gi Ri, Hiromichi Yoshikawa, Shin-ich Shikata, Appl. Phys. Lett. 90 (2007) 073506 |
| 21 | “The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - Study of surface morphology”, Norio Tokuda, Takeyasu Saito, Hitoshi Umezawa, Hideyo Okushi, and Satoshi Yamasaki, Diamond Relat. Mater., 16 (2007) 409 |
2 0 0 6 ( 6 ) | |
| 20 | “Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling”, Hitoshi Umezawa, Norio Tokuda, Masahiko Ogura, Sung-Gi Ri and Shin-ichi Shikata, Diamond Relat. Mater., 15 (2006) 1949 |
| 19 | “Energetics of dopant atoms in subsurface positions of diamond semiconductor”, Takehide Miyazaki, Hiromitsu Kato, Sung-Gi Ri, Masahiko Ogura, Norio Tokuda, and Satoshi Yamasaki, Superlattices and Microstructures 40 (2006) 574 |
| 18 | “High-efficiency Excitonic Emission with Deep-ultraviolet Light from (001)-oriented Diamond p-i-n Junction”, Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Satoshi Yamasaki, Hideyo Okushi, Jpn. J. Appl. Phys. Vol. 45 (2006) L1042 |
| 17 | “Photo-and electrochemical bonding of DNA to single crystalline CVD diamond”, D. Shin, B. Rezek, N. Tokuda, D. Takeuchi, H. Watanabe, T. Nakamura, T. Yamamoto, and C. E. Nebel, phys. stat. sol. (a) Vol. 203, Issue 13 (2006) 3245 |
| 16 | “Periodically arranged benzene-linker molecules on boron-doped single-crystalline diamond films for DNA sensing”, Dongchan Shin, Norio Tokuda, Bohuslav Rezek, Christoph E. Nebel, Electrochem. Comm., Vol. 8 (2006) 844 |
| 15 | “Surface conductive layers on (111) diamonds after oxygen treatments”, Sung-Gi Ri, Christoph E. Nebel, Daisuke Takeuchi, Bohuslav Rezek, Norio Tokuda, Satoshi Yamasaki and Hideyo Okushi, Diamond Relat. Mater., Vol. 15 (2006) 692 |
2 0 0 5 ( 3 ) | |
| 14 | “Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water”, Norio Tokuda, Masayasu Nishizawa, Satoshi Yamasaki, Kazushi Miki, Ryu Hasunuma and Kikuo Yamabe, Jpn. J. Appl. Phys., Vol. 44 (2005) L612 |
| 13 | “Utilization of Si atomic steps for Cu nanowire fabrication”, Ryu Hasunuma, Takanobu Yada, Junichi Okamoto, Daisuke Hojo, Norio Tokuda and Kikuo Yamabe, Science and Technology of Advanced Materials, Vol. 6 (2005) 667 |
| 12 | “Selective Growth of Ag Nanowires on Si(111) Surfaces by Electroless Deposition”, Norio Tokuda, Naoyuki Sasaki, Hidenobu, Watanabe, Kazushi Miki, Satoshi Yamasaki, Ryu Hasunuma and Kikuo Yamabe, J. Phys. Chem. B, Vol. 109 (2005) 12655 |
2 0 0 4 ( 4 ) | |
| 11 | “Nonuniformity in Ultrathin SiO2 on Si(111) Characterized by Conductive Atomic Force Microscopy”, Ryu Hasunuma, Junichi Okamoto, Norio Tokuda and Kikuo Yamabe, Jpn. J. Appl. Phys., Vol. 43 (2004) 7861 |
| 10 | “Fabrication of Cu Nanowires along Atomic Step Edge Lines on Si(111) Substrates”, Norio Tokuda, Hidenobu Watanabe, Daisuke Hojo, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe, Appl. Surf. Sci., Vol 237 Issues 1-4 (2004) 528 |
| 9 | “Leakage Current Distribution and Dielectric Breakdown of Cu-Contaminated Thin SiO2”, Norio Tokuda, Shingo Nishiguchi, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe, J. Electrochem. Soc., Vol. 151 Issue 4 (2004) F81 |
| 8 | “Local Dielectric Degradation of Cu-Contaminated SiO2 Thin Films”, Norio Tokuda, Shingo Nishiguchi, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe, Solid State Phenomena, Vols. 95-96 (2004) 641 |
2 0 0 3 ( 3 ) | |
| 7 | “Selective Growth of Cu Nanowires on Si(111) Substrates”, Norio Tokuda, Daisuke Hojo, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe, Jpn. J. Appl. Phys., Vol.42 (2003) L1210 |
| 6 | “Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface”, Daisuke Hojo, Norio Tokuda and Kikuo Yamabe, Jpn. J. Appl. Phys., Vol. 42 (2003) L561 |
| 5 | “Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces”, Daisuke Hojo, Hitoshi Oeda, Norio Tokuda and Kikuo Yamabe, Jpn. J. Appl. Phys., Vol. 42 (2003) 1903 |
| 4 | “Leakage Current Distribution of Cu-Contaminated Thin SiO2”, Norio Tokuda, Takahiro Kanda, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe, Jpn. J. Appl. Phys., Vol.42 (2003) L160 |
2 0 0 2 ( 2 ) | |
| 3 | “Leakage current distribution in ultrathin oxide on silicone surface with step/terrace structures”, Masahide Murata, Norio Tokuda, Daisuke Hojo and Kikuo Yamabe, Thin Solid Films, Vol. 414 (2002) 56 |
| 2 | “Atomic Topography Change of SiO2/Si Interfaces during Thermal Oxidation”, Daisuke Hojo, Norio Tokuda and Kikuo Yamabe, Jpn. J. Appl. Phys., Vol. 41 (2002) L505 |
2 0 0 1 ( 1 ) | |
| 1 | “SiO2 Surface and SiO2/Si Interface Topography Change by Thermal Oxidation”, Norio Tokuda, Masahide Murata, Daisuke Hojo and Kikuo Yamabe, Jpn. J. Appl. Phys., Vol. 40 (2001) 4763 |
| 国 内 誌 ( 8 ) | |
| 8 | “原子的に制御されたダイヤモンド表面の創出”, 徳田規夫, 山崎聡, 猪熊孝夫, 精密工学会誌Vol. 80, No. 5 (2014) 433-438 (2014.5) |
| 7 | “プラズマCVD法によるステップフリーダイヤモンド(111)表面の形成”, 徳田規夫, 牧野俊晴, 猪熊孝夫, 山崎聡, 日本結晶成長学会誌Vol. 39, No. 4 (2012) 185-189 (2012.11.1) |
| 6 | “2013ナノカーボン技術大全 第5編第3章「ダイヤモンドを用いたグラフェン成長技術」”, 徳田規夫, 電子ジャーナル (2012.11.1) |
| 5 | “半導体ダイヤモンド ―特性値、省エネ効果で究極の半導体デバイスと期待―”, 徳田規夫, 工業材料 2012年1月号, Vol.60, No.1 (2012) 66-67 |
| 4 | “正確に0.2ナノメートルを測れますか？ ～ダイヤによるナノスケール標準試料の可能性～”, 徳田規夫, 権太聡, 牧野俊晴, 山崎聡, MATERIAL STAGE, Vol. 9, No. 11, 2010年2月号 (2010) 1 |
| 3 | “ダイヤモンド(111)表面の原子的平坦化”, 徳田規夫, 李成奇, 梅澤仁, 山部紀久夫, 大串秀世, 山崎聡, NEW DIAMOND, 第87号, Vol. 23, No. 4 (2007) 30 |
| 2 | “酸素化(111)ダイヤモンドにおける表面伝導層”, 李成奇, 竹内大輔, C. E. Nebel, 徳田規夫, 山崎雄一, 山崎聡, 大串秀世, NEW DIAMOND, 第84号, Vol. 23, No. 1 (2007) 32 |
| 1 | “原子的に平坦化されたSi(111)表面へのCuナノ細線の形成と原子間力顕微鏡およびフーリエ変換赤外分光法による評価”, 徳田規夫、西澤正泰, 三木一司, 山崎聡, 蓮沼隆, 山部紀久夫, 日本赤外線学会誌 Vol.15, No.1+2 (2005) 78 |